Datasheets
FGH60N60SFTU by:

Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, TO-247AB, ROHS COMPLIANT PACKAGE-3

Part Details for FGH60N60SFTU by Fairchild Semiconductor Corporation

Overview of FGH60N60SFTU by Fairchild Semiconductor Corporation

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Applications Industrial Automation Electronic Manufacturing

Price & Stock for FGH60N60SFTU

Part # Distributor Description Stock Price Buy
DISTI # 2156-FGH60N60SFTU-ND
DigiKey INSULATED GATE BIPOLAR TRANSISTO Min Qty: 81 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 6350
In Stock
  • 81 $3.7100
$3.7100 Buy Now
Rochester Electronics Insulated Gate Bipolar Transistor, 120A, 600V, N-Channel, TO-247AB RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 37518
  • 1 $3.7500
  • 25 $3.6800
  • 100 $3.5300
  • 500 $3.3800
  • 1,000 $3.1900
$3.1900 / $3.7500 Buy Now

Part Details for FGH60N60SFTU

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FGH60N60SFTU Part Data Attributes

FGH60N60SFTU Fairchild Semiconductor Corporation
Buy Now Datasheet
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FGH60N60SFTU Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, TO-247AB, ROHS COMPLIANT PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-247
Package Description ROHS COMPLIANT PACKAGE-3
Pin Count 3
Manufacturer Package Code TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection COLLECTOR
Collector Current-Max (IC) 120 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 62 ns
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 378 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 187 ns
Turn-on Time-Nom (ton) 66 ns

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