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Part Details for FGH60N60SFDTU by onsemi
Overview of FGH60N60SFDTU by onsemi
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
Price & Stock for FGH60N60SFDTU
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
98AC1366
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Newark | Fspigbt To247 60A 600V Rohs Compliant: Yes |Onsemi FGH60N60SFDTU Min Qty: 30 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$4.2800 / $5.6600 | Buy Now |
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DISTI #
07R8549
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Newark | 600V, 60A, Field Stop Igbt/Tube |Onsemi FGH60N60SFDTU Min Qty: 60 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
FGH60N60SFDTU-ND
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DigiKey | IGBT FIELD STOP 600V 120A TO247 Min Qty: 450 Lead time: 99 Weeks Container: Tube | Temporarily Out of Stock |
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Buy Now | |
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Rochester Electronics | Insulated Gate Bipolar Transistor, 120A, 600V, N-Channel, TO-247AB RoHS: Compliant Status: Active Min Qty: 1 | 180 |
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$3.3800 / $3.9800 | Buy Now |
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Sense Electronic Company Limited | TO-247 | 18000 |
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RFQ |
Part Details for FGH60N60SFDTU
FGH60N60SFDTU CAD Models
FGH60N60SFDTU Part Data Attributes:
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FGH60N60SFDTU
onsemi
Buy Now
Datasheet
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Compare Parts:
FGH60N60SFDTU
onsemi
IGBT, Field Stop, 600V, 60A, 450-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | ROHS COMPLIANT PACKAGE-3 | |
| Manufacturer Package Code | 340CK | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 120 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 62 ns | |
| Gate-Emitter Thr Voltage-Max | 6.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 378 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 187 ns | |
| Turn-on Time-Nom (ton) | 66 ns |