Part Details for FGH40T65SHDF_F155 by onsemi
Overview of FGH40T65SHDF_F155 by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for FGH40T65SHDF_F155
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FGH40T65SHDF-F155
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Avnet Americas | Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Rail - Rail/Tube (Alt: FGH40T65SHDF-F155) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 21 Weeks, 0 Days Container: Tube | 0 |
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$1.7743 / $1.9001 | Buy Now |
DISTI #
FGH40T65SHDF-F155
|
Avnet Asia | Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Rail (Alt: FGH40T65SHDF-F155) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 21 Weeks, 0 Days | 0 |
|
$1.6437 / $1.8383 | Buy Now |
Part Details for FGH40T65SHDF_F155
FGH40T65SHDF_F155 CAD Models
FGH40T65SHDF_F155 Part Data Attributes
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FGH40T65SHDF_F155
onsemi
Buy Now
Datasheet
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Compare Parts:
FGH40T65SHDF_F155
onsemi
650V, 40A Field Stop Trench IGBT, TO-247 3L, 3600-RAIL
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ON SEMICONDUCTOR | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Manufacturer Package Code | TO247G03 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 21 Weeks | |
Samacsys Manufacturer | onsemi | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 80 A | |
Collector-Emitter Voltage-Max | 650 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 7.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-247AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 268 W | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 126 ns | |
Turn-on Time-Nom (ton) | 49 ns |