Datasheets
FGH40T65SHDF_F155 by:

650V, 40A Field Stop Trench IGBT, TO-247 3L, 3600-RAIL

Part Details for FGH40T65SHDF_F155 by onsemi

Overview of FGH40T65SHDF_F155 by onsemi

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Price & Stock for FGH40T65SHDF_F155

Part # Distributor Description Stock Price Buy
DISTI # FGH40T65SHDF-F155
Avnet Americas Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Rail - Rail/Tube (Alt: FGH40T65SHDF-F155) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 21 Weeks, 0 Days Container: Tube 0
  • 450 $1.9001
  • 900 $1.8581
  • 1,800 $1.8302
  • 2,700 $1.8023
  • 3,600 $1.7743
$1.7743 / $1.9001 Buy Now
DISTI # FGH40T65SHDF-F155
Avnet Asia Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Rail (Alt: FGH40T65SHDF-F155) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 21 Weeks, 0 Days 0
  • 450 $1.8383
  • 900 $1.8144
  • 1,350 $1.7912
  • 2,250 $1.7685
  • 4,500 $1.7248
  • 11,250 $1.6832
  • 22,500 $1.6437
$1.6437 / $1.8383 Buy Now

Part Details for FGH40T65SHDF_F155

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FGH40T65SHDF_F155 Part Data Attributes

FGH40T65SHDF_F155 onsemi
Buy Now Datasheet
Compare Parts:
FGH40T65SHDF_F155 onsemi 650V, 40A Field Stop Trench IGBT, TO-247 3L, 3600-RAIL
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ON SEMICONDUCTOR
Package Description FLANGE MOUNT, R-PSFM-T3
Manufacturer Package Code TO247G03
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 21 Weeks
Samacsys Manufacturer onsemi
Case Connection COLLECTOR
Collector Current-Max (IC) 80 A
Collector-Emitter Voltage-Max 650 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 7.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 268 W
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 126 ns
Turn-on Time-Nom (ton) 49 ns

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