Part Details for FGH40N6S2 by Fairchild Semiconductor Corporation
Overview of FGH40N6S2 by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FGH40N6S2
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | Insulated Gate Bipolar Transistor, 75A, 600V, N-Channel, TO-247 ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 3 |
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$1.4200 / $1.6700 | Buy Now |
Part Details for FGH40N6S2
FGH40N6S2 CAD Models
FGH40N6S2 Part Data Attributes
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FGH40N6S2
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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FGH40N6S2
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-247 | |
| Package Description | TO-247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 75 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 105 ns | |
| Gate-Emitter Thr Voltage-Max | 5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 290 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 153 ns | |
| Turn-on Time-Nom (ton) | 32 ns |
Alternate Parts for FGH40N6S2
This table gives cross-reference parts and alternative options found for FGH40N6S2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FGH40N6S2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SGP13N60UF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FGH40N6S2 vs SGP13N60UF |
| IXGH38N60 | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | FGH40N6S2 vs IXGH38N60 |
| MGP14N60E | 18A, 600V, N-CHANNEL IGBT, TO-220AB, CASE 221A-09, 3 PIN | onsemi | FGH40N6S2 vs MGP14N60E |
| APT30GP60SG | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, D3PAK, 3 PIN | Microsemi Corporation | FGH40N6S2 vs APT30GP60SG |
| IRGPC30FD2 | Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN | International Rectifier | FGH40N6S2 vs IRGPC30FD2 |
| IRG4PC40SPBF | Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN | Infineon Technologies AG | FGH40N6S2 vs IRG4PC40SPBF |
| APT12GT60KR | Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN | Microsemi Corporation | FGH40N6S2 vs APT12GT60KR |
| HGTG20N60A4D | 600V, SMPS IGBT, TO-247-3, 450-TUBE | onsemi | FGH40N6S2 vs HGTG20N60A4D |
| IRG4PC40WPBF | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN | Infineon Technologies AG | FGH40N6S2 vs IRG4PC40WPBF |
| IXGH22N50B | Insulated Gate Bipolar Transistor, 44A I(C), 500V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | FGH40N6S2 vs IXGH22N50B |