Datasheets
FGH30S150P by:
onsemi
Fairchild Semiconductor Corporation
onsemi
Not Found

IGBT, 1500 V, 30 A Shorted-anode, TO-247-3, 450-TUBE

Part Details for FGH30S150P by onsemi

Results Overview of FGH30S150P by onsemi

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

FGH30S150P Information

FGH30S150P by onsemi is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for FGH30S150P

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FGH30S150P Part Data Attributes

FGH30S150P onsemi
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FGH30S150P onsemi IGBT, 1500 V, 30 A Shorted-anode, TO-247-3, 450-TUBE
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Pbfree Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code TO-247-3
Manufacturer Package Code 340CK
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Case Connection COLLECTOR
Collector Current-Max (IC) 60 A
Collector-Emitter Voltage-Max 1500 V
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-247AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1080 ns
Turn-on Time-Nom (ton) 372 ns

FGH30S150P Related Parts

FGH30S150P Frequently Asked Questions (FAQ)

  • The maximum junction temperature for the FGH30S150P is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to prevent thermal runaway.

  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink using a thermal interface material, and provide adequate airflow around the heat sink.

  • The recommended gate drive voltage for the FGH30S150P is between 10V and 15V. A higher gate drive voltage can reduce switching losses, but may also increase gate oxide stress.

  • Yes, the FGH30S150P can be used in a parallel configuration to increase current handling capability. However, it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.

  • The recommended dead time for the FGH30S150P is typically around 100-200 ns, depending on the specific application and switching frequency. A longer dead time can reduce electromagnetic interference (EMI), but may also increase switching losses.