Datasheets
FGB20N60SFD_F085 by:

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, D2PAK-3/2

Part Details for FGB20N60SFD_F085 by Fairchild Semiconductor Corporation

Overview of FGB20N60SFD_F085 by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for FGB20N60SFD_F085

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FGB20N60SFD_F085 Part Data Attributes:

FGB20N60SFD_F085 Fairchild Semiconductor Corporation
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FGB20N60SFD_F085 Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, D2PAK-3/2
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 2
Manufacturer Package Code 2LD,TO263, SURFACE MOUNT
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection COLLECTOR
Collector Current-Max (IC) 40 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Reference Standard AEC-Q101
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 123 ns
Turn-on Time-Nom (ton) 28 ns

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