Part Details for FGA6530WDF by onsemi
Overview of FGA6530WDF by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
Price & Stock for FGA6530WDF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FGA6530WDF
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Avnet Americas | Trans IGBT Chip N-CH 650V 60A 3-Pin TO-3PN Tube - Rail/Tube (Alt: FGA6530WDF) RoHS: Compliant Min Qty: 321 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 1800 Partner Stock |
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$1.9344 / $2.3088 | Buy Now |
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Flip Electronics | Stock, ship today | 1800 |
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$1.5600 | RFQ |
Part Details for FGA6530WDF
FGA6530WDF CAD Models
FGA6530WDF Part Data Attributes:
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FGA6530WDF
onsemi
Buy Now
Datasheet
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Compare Parts:
FGA6530WDF
onsemi
IGBT, 650 V, 30 A Field Stop Trench, 450-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | TO-3PN, SC-65, 3 PIN | |
| Manufacturer Package Code | 340BZ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Collector Current-Max (IC) | 60 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 7.6 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 176 W | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 59.2 ns | |
| Turn-on Time-Nom (ton) | 40 ns | |
| VCEsat-Max | 2.3 V |