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IGBT, 650 V, 50 A Field Stop Trench, 450-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
01AC8665
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Newark | 650 V, 50 A Field Stop Trench Igbt/Tube Rohs Compliant: Yes |Onsemi FGA5065ADF Min Qty: 450 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now | |
DISTI #
FGA5065ADF
|
Avnet Americas | IGBTs - Rail/Tube (Alt: FGA5065ADF) RoHS: Compliant Min Qty: 266 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 368 Partner Stock |
|
$2.3312 / $2.7824 | Buy Now |
|
Rochester Electronics | Insulated Gate Bipolar Transistor RoHS: Compliant Status: Obsolete Min Qty: 1 | 10611 |
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$2.3400 / $2.7500 | Buy Now |
|
Flip Electronics | Stock, ship today | 368 |
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$1.8800 | RFQ |
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FGA5065ADF
onsemi
Buy Now
Datasheet
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FGA5065ADF
onsemi
IGBT, 650 V, 50 A Field Stop Trench, 450-TUBE
|
Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Package Description | SC-65, TO-3PN, 3 PIN | |
Manufacturer Package Code | 340BZ | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Collector Current-Max (IC) | 100 A | |
Collector-Emitter Voltage-Max | 650 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 7.6 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 268 W | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | GENERAL PURPOSE SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 80 ns | |
Turn-on Time-Nom (ton) | 57.6 ns | |
VCEsat-Max | 2.2 V |