Datasheets
FGA5065ADF by:

IGBT, 650 V, 50 A Field Stop Trench, 450-TUBE

Part Details for FGA5065ADF by onsemi

Overview of FGA5065ADF by onsemi

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Price & Stock for FGA5065ADF

Part # Distributor Description Stock Price Buy
DISTI # 01AC8665
Newark 650 V, 50 A Field Stop Trench Igbt/Tube Rohs Compliant: Yes |Onsemi FGA5065ADF Min Qty: 450 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # FGA5065ADF
Avnet Americas IGBTs - Rail/Tube (Alt: FGA5065ADF) RoHS: Compliant Min Qty: 266 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube 368 Partner Stock
  • 266 $2.7824
  • 270 $2.7072
  • 540 $2.6320
  • 1,400 $2.5568
  • 2,700 $2.4816
  • 14,000 $2.4064
  • 27,000 $2.3312
$2.3312 / $2.7824 Buy Now
Rochester Electronics Insulated Gate Bipolar Transistor RoHS: Compliant Status: Obsolete Min Qty: 1 10611
  • 1 $2.7500
  • 25 $2.6900
  • 100 $2.5800
  • 500 $2.4700
  • 1,000 $2.3400
$2.3400 / $2.7500 Buy Now
Flip Electronics Stock, ship today 368
  • 1 $1.8800
$1.8800 RFQ

Part Details for FGA5065ADF

FGA5065ADF CAD Models

FGA5065ADF Part Data Attributes

FGA5065ADF onsemi
Buy Now Datasheet
Compare Parts:
FGA5065ADF onsemi IGBT, 650 V, 50 A Field Stop Trench, 450-TUBE
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Package Description SC-65, TO-3PN, 3 PIN
Manufacturer Package Code 340BZ
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Collector Current-Max (IC) 100 A
Collector-Emitter Voltage-Max 650 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 7.6 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 268 W
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application GENERAL PURPOSE SWITCHING
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 80 ns
Turn-on Time-Nom (ton) 57.6 ns
VCEsat-Max 2.2 V

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