Part Details for FGA40T65SHDF by onsemi
Overview of FGA40T65SHDF by onsemi
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Electronic Manufacturing
Price & Stock for FGA40T65SHDF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
40Y7312
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Newark | 650 V, 40 A Field Stop Trench Igbt/Tube Rohs Compliant: Yes |Onsemi FGA40T65SHDF RoHS: Compliant Min Qty: 450 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now | |
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DISTI #
FGA40T65SHDF-ND
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DigiKey | IGBT TRENCH/FS 650V 80A TO3PN Min Qty: 1 Lead time: 99 Weeks Container: Tube |
133 In Stock |
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$3.1030 / $4.6900 | Buy Now |
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DISTI #
FGA40T65SHDF
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Avnet Americas | Trans IGBT Chip N-CH 650V 80A 3-Pin TO-3PN Tube - Rail/Tube (Alt: FGA40T65SHDF) RoHS: Compliant Min Qty: 179 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 1350 Partner Stock |
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$1.7360 / $2.0720 | Buy Now |
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Rochester Electronics | Insulated Gate Bipolar Transistor RoHS: Compliant Status: Obsolete Min Qty: 1 | 1350 |
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$1.7300 / $2.0400 | Buy Now |
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DISTI #
FGA40T65SHDF
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Avnet Silica | (Alt: FGA40T65SHDF) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 100 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Flip Electronics | Stock | 478 |
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RFQ |
Part Details for FGA40T65SHDF
FGA40T65SHDF CAD Models
FGA40T65SHDF Part Data Attributes
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FGA40T65SHDF
onsemi
Buy Now
Datasheet
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Compare Parts:
FGA40T65SHDF
onsemi
IGBT, 650 V, 40 A Field Stop Trench, 450-TUBE
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | TO-3PN, 3 PIN | |
| Manufacturer Package Code | 340BZ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Collector Current-Max (IC) | 80 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 7.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 268 W | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 126 ns | |
| Turn-on Time-Nom (ton) | 49 ns | |
| VCEsat-Max | 1.81 V |