There are no models available for this part yet.
Overview of FGA40N65SMD by Fairchild Semiconductor Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for FGA40N65SMD by Fairchild Semiconductor Corporation
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
ComSIT USA | 650 V, 40 A FIELD STOP IGBT Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel RoHS: Compliant |
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RFQ |
CAD Models for FGA40N65SMD by Fairchild Semiconductor Corporation
Part Data Attributes for FGA40N65SMD by Fairchild Semiconductor Corporation
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---|---|
Pbfree Code
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Yes
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Rohs Code
|
Yes
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Part Life Cycle Code
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Transferred
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Ihs Manufacturer
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FAIRCHILD SEMICONDUCTOR CORP
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Part Package Code
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TO-3PN
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Package Description
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ROHS COMPLIANT, TO-3PN, SC-65, 3 PIN
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Pin Count
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3
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Manufacturer Package Code
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3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED
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Reach Compliance Code
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compliant
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ECCN Code
|
EAR99
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HTS Code
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8541.29.00.95
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Additional Feature
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LOW CONDUCTION LOSS
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Collector Current-Max (IC)
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80 A
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Collector-Emitter Voltage-Max
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650 V
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Configuration
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SINGLE WITH BUILT-IN DIODE
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Fall Time-Max (tf)
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17 ns
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Gate-Emitter Thr Voltage-Max
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6 V
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Gate-Emitter Voltage-Max
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20 V
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JESD-30 Code
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R-PSFM-T3
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JESD-609 Code
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e3
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Number of Elements
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1
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Number of Terminals
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3
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Operating Temperature-Max
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175 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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FLANGE MOUNT
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
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349 W
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Rise Time-Max (tr)
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28 ns
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Surface Mount
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NO
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Terminal Finish
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MATTE TIN
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Terminal Form
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THROUGH-HOLE
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Terminal Position
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SINGLE
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Transistor Application
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POWER CONTROL
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Transistor Element Material
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SILICON
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