Part Details for FF900R12IE4PBOSA1 by Infineon Technologies AG
Overview of FF900R12IE4PBOSA1 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FF900R12IE4PBOSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
34AC1494
|
Newark | Igbt, Module, N-Ch, 1.2Kv, 900A, Transistor Polarity:N Channel, Dc Collector Current:900A, Collector Emitter Saturation Voltage Vce(On):1.7V, Power Dissipation Pd:5.1Kw, Collector Emitter Voltage V(Br)Ceo:1.2Kv, Transistor Case Rohs Compliant: Yes |Infineon FF900R12IE4PBOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
|
$489.5900 / $508.6100 | Buy Now |
|
DISTI #
448-FF900R12IE4PBOSA1-ND
|
DigiKey | IGBT MOD 1200V 900A 20MW Min Qty: 1 Lead time: 14 Weeks Container: Tray |
9 In Stock |
|
$470.7600 / $489.1500 | Buy Now |
|
DISTI #
FF900R12IE4PBOSA1
|
Avnet Americas | Transistor IGBT Module N-CH 1200V 900A ±20V Screw Tray - Trays (Alt: FF900R12IE4PBOSA1) RoHS: Compliant Min Qty: 3 Package Multiple: 3 Lead time: 14 Weeks, 0 Days Container: Tray | 0 |
|
$564.4170 | Buy Now |
|
DISTI #
726-FF900R12IE4PBOSA
|
Mouser Electronics | IGBT Modules PP IHM I RoHS: Compliant | 3 |
|
$470.7600 / $488.9200 | Buy Now |
|
|
Ameya Holding Limited | 1 |
|
RFQ | ||
|
DISTI #
SP001355414
|
EBV Elektronik | Transistor IGBT Module N-CH 1200V 900A �20V Screw Tray (Alt: SP001355414) RoHS: Compliant Min Qty: 3 Package Multiple: 3 Lead time: 15 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for FF900R12IE4PBOSA1
FF900R12IE4PBOSA1 CAD Models
FF900R12IE4PBOSA1 Part Data Attributes
|
|
FF900R12IE4PBOSA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
FF900R12IE4PBOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-10
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | FLANGE MOUNT, R-PUFM-X10 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| JESD-30 Code | R-PUFM-X10 | |
| Number of Elements | 2 | |
| Number of Terminals | 10 | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Reference Standard | UL APPROVED | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 940 ns | |
| Turn-on Time-Nom (ton) | 350 ns |