FF900R12IE4PBOSA1
Infineon Technologies AG
Description: Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-10

Overview of FF900R12IE4PBOSA1 by Infineon Technologies AG

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  • Distributor Offerings: ( 5 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Price & Stock for FF900R12IE4PBOSA1 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 34AC1494
Newark Igbt, Module, N-Ch, 1.2Kv, 900A, Transistor Polarity:N Channel, Dc Collector Current:900A, Collector Emitter Saturation Voltage Vce(On):1.7V, Power Dissipation Pd:5.1Kw, Collector Emitter Voltage V(Br)Ceo:1.2Kv, Transistor Case Rohs Compliant: Yes |Infineon FF900R12IE4PBOSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $508.6100
  • 6 $502.2700
  • 12 $495.9300
  • 27 $489.5900
$489.5900 / $508.6100 Buy Now
DISTI # 448-FF900R12IE4PBOSA1-ND
DigiKey IGBT MOD 1200V 900A 20MW Min Qty: 1 Lead time: 14 Weeks Container: Tray 4
In Stock
  • 1 $455.1800
$455.1800 Buy Now
DISTI # FF900R12IE4PBOSA1
Avnet Americas Transistor IGBT Module N-CH 1200V 900A ±20V Screw Tray - Trays (Alt: FF900R12IE4PBOSA1) RoHS: Compliant Min Qty: 3 Package Multiple: 3 Lead time: 14 Weeks, 0 Days Container: Tray 0
RFQ
DISTI # 726-FF900R12IE4PBOSA
Mouser Electronics IGBT Modules 1200 V, 900 A dual IGBT module RoHS: Compliant 3
  • 1 $488.9100
  • 12 $470.7600
$470.7600 / $488.9100 Buy Now
DISTI # SP001355414
EBV Elektronik Transistor IGBT Module N-CH 1200V 900A �20V Screw Tray (Alt: SP001355414) RoHS: Compliant Min Qty: 3 Package Multiple: 3 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now

CAD Models for FF900R12IE4PBOSA1 by Infineon Technologies AG
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Part Data Attributes for FF900R12IE4PBOSA1 by Infineon Technologies AG

FF900R12IE4PBOSA1
Infineon Technologies AG
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
FLANGE MOUNT, R-PUFM-X10
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
14 Weeks
Samacsys Manufacturer
Infineon
Case Connection
ISOLATED
Collector-Emitter Voltage-Max
1200 V
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 Code
R-PUFM-X10
Number of Elements
2
Number of Terminals
10
Operating Temperature-Min
-40 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Reference Standard
UL APPROVED
Surface Mount
NO
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
940 ns
Turn-on Time-Nom (ton)
350 ns
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  1. FF900R12IE4PBOSA1
    Infineon Technologies AG
    Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-10
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