Datasheets
FF900R12IE4BOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

Part Details for FF900R12IE4BOSA1 by Infineon Technologies AG

Overview of FF900R12IE4BOSA1 by Infineon Technologies AG

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Applications Environmental Monitoring Internet of Things (IoT) Space Technology Smart Cities Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Automotive Consumer Electronics Security and Surveillance Aerospace and Defense Healthcare Robotics and Drones

Price & Stock for FF900R12IE4BOSA1

Part # Distributor Description Stock Price Buy
DISTI # 13AC8668
Newark Igbt, Module, N-Ch, 1.2Kv, 900A, Transistor Polarity:N Channel, Dc Collector Current:900A, Collector Emitter Saturation Voltage Vce(On):1.75V, Power Dissipation Pd:5.1Kw, Collector Emitter Voltage V(Br)Ceo:1.2Kv, Transistor Case Rohs Compliant: Yes |Infineon FF900R12IE4BOSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 448-FF900R12IE4BOSA1-ND
DigiKey IGBT MOD 1200V 900A 5100W Min Qty: 1 Lead time: 14 Weeks Container: Tray 3
In Stock
  • 1 $437.4500
$437.4500 Buy Now
DISTI # FF900R12IE4BOSA1
Avnet Americas INDUSTRY - Trays (Alt: FF900R12IE4BOSA1) RoHS: Compliant Min Qty: 3 Package Multiple: 3 Lead time: 14 Weeks, 0 Days Container: Tray 0
RFQ
Future Electronics FF900R12IE4 Series 1200 V 900 A 5100 W Chassis Mount PrimePACK™ IGBT Module RoHS: Compliant pbFree: Yes Min Qty: 3 Package Multiple: 3 Lead time: 14 Weeks Container: Tray 0
Tray
  • 3 $440.7100
  • 6 $434.7500
  • 9 $428.8800
$428.8800 / $440.7100 Buy Now
DISTI # 75724584
Verical Trans IGBT Module N-CH 1200V 900A 5100W 10-Pin PRIME2-1 Tray Min Qty: 1 Package Multiple: 1 Date Code: 2339 Americas - 3
  • 1 $530.0000
$530.0000 Buy Now
Rochester Electronics FF900R12IE4 - PP, IHM I, XHP 1,7KV RoHS: Compliant Status: Active Min Qty: 1 135
  • 1 $510.3600
  • 25 $500.1500
  • 100 $479.7400
  • 500 $459.3200
  • 1,000 $433.8000
$433.8000 / $510.3600 Buy Now
DISTI # C1S322000110218
Chip1Stop Trans IGBT Module N-CH 1200V 900A 5100000mW 10-Pin PRIME2-1 Tray RoHS: Compliant Container: Tray 3
  • 1 $438.0000
$438.0000 Buy Now
DISTI # SP000614712
EBV Elektronik Trans IGBT Module N-CH 1.2KV 900A 10-pin PRIME2-1 (Alt: SP000614712) RoHS: Compliant Min Qty: 3 Package Multiple: 3 Lead time: 15 Weeks, 0 Days EBV - 0
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Part Details for FF900R12IE4BOSA1

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FF900R12IE4BOSA1 Part Data Attributes

FF900R12IE4BOSA1 Infineon Technologies AG
Buy Now Datasheet
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FF900R12IE4BOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, N-Channel, MODULE-11
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X7
Pin Count 11
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 900 A
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 940 ns
Turn-on Time-Nom (ton) 350 ns

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