Datasheets
FF800R17KE3NOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 1150A I(C), 1700V V(BR)CES, N-Channel, MODULE-10

Part Details for FF800R17KE3NOSA1 by Infineon Technologies AG

Overview of FF800R17KE3NOSA1 by Infineon Technologies AG

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Price & Stock for FF800R17KE3NOSA1

Part # Distributor Description Stock Price Buy
DISTI # 2156-FF800R17KE3NOSA1-448-ND
DigiKey IGBT MODULE 1700V 4450W Min Qty: 1 Lead time: 14 Weeks Container: Bulk MARKETPLACE PRODUCT 1
In Stock
  • 1 $967.4200
$967.4200 Buy Now
DISTI # FF800R17KE3NOSA1-ND
DigiKey IGBT MODULE 1700V 4450W Min Qty: 1 Lead time: 14 Weeks Container: Tray Limited Supply - Call
  • 2 $872.6150
  • 10 $842.1770
$842.1770 / $872.6150 Buy Now
DISTI # FF800R17KE3NOSA1
Avnet Americas Transistor IGBT Module N-CH 1700V 1150A 20V Screw Mount Tray - Trays (Alt: FF800R17KE3NOSA1) RoHS: Not Compliant Min Qty: 2 Package Multiple: 2 Lead time: 14 Weeks, 0 Days Container: Tray 0
  • 2 $1,138.5750
  • 4 $1,105.0875
  • 8 $1,071.6000
  • 12 $1,038.1125
  • 16 $1,004.6250
  • 20 $971.1375
  • 200 $937.6500
$937.6500 / $1,138.5750 Buy Now
Rochester Electronics FF800R17 - Insulated Gate Bipolar Transistor Module RoHS: Not Compliant Status: Not Recommended for New Designs Min Qty: 1 1
  • 1 $976.7200
  • 25 $957.1800
  • 100 $918.1200
  • 500 $879.0500
  • 1,000 $830.2100
$830.2100 / $976.7200 Buy Now
DISTI # FF800R17KE3NOSA1
Avnet Americas Transistor IGBT Module N-CH 1700V 1150A 20V Screw Mount Tray - Trays (Alt: FF800R17KE3NOSA1) RoHS: Not Compliant Min Qty: 2 Package Multiple: 2 Lead time: 14 Weeks, 0 Days Container: Tray 0
  • 2 $1,138.5750
  • 4 $1,105.0875
  • 8 $1,071.6000
  • 12 $1,038.1125
  • 16 $1,004.6250
  • 20 $971.1375
  • 200 $937.6500
$937.6500 / $1,138.5750 Buy Now
DISTI # SP000100585
EBV Elektronik Transistor IGBT Module N-CH 1700V 1150A 20V Screw Mount Tray (Alt: SP000100585) RoHS: Not Compliant Min Qty: 2 Package Multiple: 2 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FF800R17KE3NOSA1

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FF800R17KE3NOSA1 Part Data Attributes:

FF800R17KE3NOSA1 Infineon Technologies AG
Buy Now Datasheet
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FF800R17KE3NOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 1150A I(C), 1700V V(BR)CES, N-Channel, MODULE-10
Pbfree Code No
Rohs Code No
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description MODULE-10
Pin Count 10
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 14 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 1150 A
Collector-Emitter Voltage-Max 1700 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X10
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 10
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1900 ns
Turn-on Time-Nom (ton) 900 ns

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