Part Details for FF600R17KE3B2NOSA1 by Infineon Technologies AG
Overview of FF600R17KE3B2NOSA1 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FF600R17KE3B2NOSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
448-FF600R17KE3B2NOSA1-ND
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DigiKey | IGBT MODULE 1700V 4300W Min Qty: 2 Lead time: 18 Weeks Container: Tray | Limited Supply - Call |
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$936.0560 / $969.8900 | Buy Now |
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DISTI #
FF600R17KE3B2NOSA1
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Avnet Americas | Transistor IGBT Module N-CH 1700V 950A 20V Screw Mount Tray - Trays (Alt: FF600R17KE3B2NOSA1) RoHS: Not Compliant Min Qty: 2 Package Multiple: 2 Lead time: 18 Weeks, 0 Days Container: Tray | 0 |
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$1,042.1711 / $1,265.4937 | Buy Now |
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DISTI #
SP000100601
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EBV Elektronik | Transistor IGBT Module N-CH 1700V 950A 20V Screw Mount Tray (Alt: SP000100601) RoHS: Not Compliant Min Qty: 2 Package Multiple: 2 Lead time: 19 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for FF600R17KE3B2NOSA1
FF600R17KE3B2NOSA1 CAD Models
FF600R17KE3B2NOSA1 Part Data Attributes
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FF600R17KE3B2NOSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
FF600R17KE3B2NOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 950A I(C), 1700V V(BR)CES, N-Channel, MODULE-10
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| Rohs Code | No | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | FLANGE MOUNT, R-XUFM-X10 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 18 Weeks | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 950 A | |
| Collector-Emitter Voltage-Max | 1700 V | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| JESD-30 Code | R-XUFM-X10 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 10 | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 1900 ns | |
| Turn-on Time-Nom (ton) | 900 ns |
Alternate Parts for FF600R17KE3B2NOSA1
This table gives cross-reference parts and alternative options found for FF600R17KE3B2NOSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FF600R17KE3B2NOSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FF600R17KE3_B2 | Insulated Gate Bipolar Transistor, 950A I(C), 1700V V(BR)CES, N-Channel, MODULE-10 | Infineon Technologies AG | FF600R17KE3B2NOSA1 vs FF600R17KE3_B2 |