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Insulated Gate Bipolar Transistor, 995A I(C), 1200V V(BR)CES, N-Channel, MODULE-11
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-FF600R12ME4B73BPSA1-ND
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DigiKey | IGBT MOD 1200V 1200A 20MW Min Qty: 2 Lead time: 98 Weeks Container: Bulk MARKETPLACE PRODUCT |
182 In Stock |
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$212.8200 | Buy Now |
DISTI #
448-FF600R12ME4B73BPSA1-ND
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DigiKey | IGBT MOD 1200V 1200A 20MW Min Qty: 2 Lead time: 98 Weeks Container: Tray | Limited Supply - Call |
|
Buy Now | |
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Rochester Electronics | FF600R12 - IGBT Module RoHS: Compliant Status: Active Min Qty: 1 | 182 |
|
$182.6400 / $214.8600 | Buy Now |
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FF600R12ME4B73BPSA1
Infineon Technologies AG
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Datasheet
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FF600R12ME4B73BPSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 995A I(C), 1200V V(BR)CES, N-Channel, MODULE-11
|
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | MODULE-11 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 995 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
JESD-30 Code | R-XUFM-X7 | |
Number of Elements | 2 | |
Number of Terminals | 7 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 770 ns | |
Turn-on Time-Nom (ton) | 310 ns |