Datasheets
FF600R12IP4VBOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor,

Part Details for FF600R12IP4VBOSA1 by Infineon Technologies AG

Results Overview of FF600R12IP4VBOSA1 by Infineon Technologies AG

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FF600R12IP4VBOSA1 Information

FF600R12IP4VBOSA1 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FF600R12IP4VBOSA1

Part # Distributor Description Stock Price Buy
DISTI # FF600R12IP4VBOSA1
Avnet Americas Transistor IGBT Module N-CH 1200V 600A 20V Screw Mount Tray - Trays (Alt: FF600R12IP4VBOSA1) RoHS: Compliant Min Qty: 3 Package Multiple: 3 Container: Tray 0
RFQ
DISTI # 86109665
Verical Trench and Field Stop IGBT Module Min Qty: 1 Package Multiple: 1 Date Code: 1301 Americas - 30
  • 1 $569.0875
  • 25 $557.7000
  • 100 $534.9375
  • 500 $512.1750
  • 1,000 $483.7250
$483.7250 / $569.0875 Buy Now
DISTI # 86109501
Verical Trench and Field Stop IGBT Module Min Qty: 1 Package Multiple: 1 Date Code: 1901 Americas - 24
  • 1 $569.0875
  • 25 $557.7000
  • 100 $534.9375
  • 500 $512.1750
  • 1,000 $483.7250
$483.7250 / $569.0875 Buy Now
DISTI # 86109104
Verical Trench and Field Stop IGBT Module Min Qty: 1 Package Multiple: 1 Date Code: 1601 Americas - 15
  • 1 $569.0875
  • 25 $557.7000
  • 100 $534.9375
  • 500 $512.1750
  • 1,000 $483.7250
$483.7250 / $569.0875 Buy Now
Rochester Electronics FF600R12 - IGBT Module RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 69
  • 1 $455.2700
  • 25 $446.1600
  • 100 $427.9500
  • 500 $409.7400
  • 1,000 $386.9800
$386.9800 / $455.2700 Buy Now
Vyrian Transistors 56
RFQ

Part Details for FF600R12IP4VBOSA1

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FF600R12IP4VBOSA1 Part Data Attributes

FF600R12IP4VBOSA1 Infineon Technologies AG
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FF600R12IP4VBOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor,
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description MODULE-10
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PUFM-X10
Number of Elements 2
Number of Terminals 10
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3350 W
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1050 ns
Turn-on Time-Nom (ton) 370 ns
VCEsat-Max 2.05 V

FF600R12IP4VBOSA1 Frequently Asked Questions (FAQ)

  • The maximum junction temperature for the FF600R12IP4VBOSA1 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.

  • To ensure reliability, it's essential to follow proper thermal management, such as using a heat sink and ensuring good airflow. Additionally, the device should be operated within the specified voltage and current ratings, and the PCB should be designed to minimize thermal resistance and electrical noise.

  • The recommended gate drive voltage for the FF600R12IP4VBOSA1 is between 10V and 15V, with a maximum of 20V. A higher gate drive voltage can improve switching performance, but it also increases the risk of damage to the device.

  • To protect the FF600R12IP4VBOSA1 from overvoltage and overcurrent, it's recommended to use a voltage regulator and a current limiter in the circuit design. Additionally, a fuse or a circuit breaker can be used to disconnect the power supply in case of an overcurrent condition.

  • The typical switching frequency range for the FF600R12IP4VBOSA1 is up to 100 kHz, depending on the application and the required switching performance. However, the device can operate at higher frequencies with proper design and layout considerations.