FF600R12IP4VBOSA1
Infineon Technologies AG
Description: Insulated Gate Bipolar Transistor,

Overview of FF600R12IP4VBOSA1 by Infineon Technologies AG

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  • Distributor Offerings: ( 4 listings )
  • Number of FFF Equivalents: ( 0 crosses )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 crosses )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Price & Stock for FF600R12IP4VBOSA1 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 2156-FF600R12IP4VBOSA1-ND
DigiKey IGBT MOD 1200V 600A 3350W Min Qty: 1 Lead time: 97 Weeks Container: Bulk MARKETPLACE PRODUCT 69
In Stock
  • 1 $473.4800
$473.4800 Buy Now
DISTI # FF600R12IP4VBOSA1-ND
DigiKey IGBT MOD 1200V 600A 3350W Min Qty: 1 Lead time: 97 Weeks Container: Tray Limited Supply - Call
  • 3 $440.3233
  • 12 $423.7692
$423.7692 / $440.3233 Buy Now
DISTI # FF600R12IP4VBOSA1
Avnet Americas Transistor IGBT Module N-CH 1200V 600A 20V Screw Mount Tray - Trays (Alt: FF600R12IP4VBOSA1) RoHS: Compliant Min Qty: 3 Package Multiple: 3 Container: Tray 0
  • 3 $557.2464
  • 6 $540.8568
  • 12 $524.4672
  • 18 $508.0776
  • 24 $491.6880
  • 30 $475.2984
  • 300 $458.9088
$458.9088 / $557.2464 Buy Now
Rochester Electronics FF600R12 - IGBT Module RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 69
  • 1 $478.0300
  • 25 $468.4700
  • 100 $449.3500
  • 500 $430.2300
  • 1,000 $406.3300
$406.3300 / $478.0300 Buy Now

CAD Models for FF600R12IP4VBOSA1 by Infineon Technologies AG
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Part Data Attributes for FF600R12IP4VBOSA1 by Infineon Technologies AG

FF600R12IP4VBOSA1
Infineon Technologies AG
-
-
Rohs Code
Yes
Part Life Cycle Code
Not Recommended
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
MODULE-10
Reach Compliance Code
compliant
ECCN Code
EAR99
Case Connection
ISOLATED
Collector-Emitter Voltage-Max
1200 V
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Thr Voltage-Max
6.5 V
Gate-Emitter Voltage-Max
20 V
JESD-30 Code
R-PUFM-X10
Number of Elements
2
Number of Terminals
10
Operating Temperature-Max
150 °C
Operating Temperature-Min
-40 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
3350 W
Surface Mount
NO
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
1050 ns
Turn-on Time-Nom (ton)
370 ns
VCEsat-Max
2.05 V
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  1. FF600R12IP4VBOSA1
    Infineon Technologies AG
    Insulated Gate Bipolar Transistor,
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