Datasheets
FF600R12IE4BOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

Part Details for FF600R12IE4BOSA1 by Infineon Technologies AG

Overview of FF600R12IE4BOSA1 by Infineon Technologies AG

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Applications Telecommunications Automotive

Price & Stock for FF600R12IE4BOSA1

Part # Distributor Description Stock Price Buy
DISTI # 13AC8662
Newark Igbt, Module, N-Ch, 1.2Kv, 600A, Transistor Polarity:N Channel, Dc Collector Current:600A, Collector Emitter Saturation Voltage Vce(On):1.75V, Power Dissipation Pd:3.35Kw, Collector Emitter Voltage V(Br)Ceo:1.2Kv, Transistor Case Rohs Compliant: Yes |Infineon FF600R12IE4BOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $364.2600
  • 5 $359.1700
  • 10 $354.0700
  • 25 $333.7000
$333.7000 / $364.2600 Buy Now
DISTI # 448-FF600R12IE4BOSA1-ND
DigiKey IGBT MOD 1200V 600A 3350W Min Qty: 1 Lead time: 14 Weeks Container: Tray 2
In Stock
  • 1 $378.2700
  • 12 $364.0525
  • 27 $352.6759
$352.6759 / $378.2700 Buy Now
DISTI # FF600R12IE4BOSA1
Avnet Americas Transistor IGBT Module N-CH 1200V 600A 20V Screw Mount Tray - Trays (Alt: FF600R12IE4BOSA1) RoHS: Compliant Min Qty: 3 Package Multiple: 3 Lead time: 14 Weeks, 0 Days Container: Tray 0
  • 3 $436.4800
$436.4800 Buy Now
Ameya Holding Limited IGBT MODULE 1200V 600A 3
RFQ
DISTI # SP000614706
EBV Elektronik Transistor IGBT Module N-CH 1200V 600A 20V Screw Mount Tray (Alt: SP000614706) RoHS: Compliant Min Qty: 3 Package Multiple: 3 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FF600R12IE4BOSA1

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FF600R12IE4BOSA1 Part Data Attributes:

FF600R12IE4BOSA1 Infineon Technologies AG
Buy Now Datasheet
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FF600R12IE4BOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-11
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X7
Pin Count 11
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 600 A
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3350 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1020 ns
Turn-on Time-Nom (ton) 410 ns
VCEsat-Max 2.05 V

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