Part Details for FF50R12RT4HOSA1 by Infineon Technologies AG
Overview of FF50R12RT4HOSA1 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FF50R12RT4HOSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC8660
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Newark | Igbt, Module, N-Ch, 1.2Kv, 50A, Transistor Polarity:N Channel, Dc Collector Current:50A, Collector Emitter Saturation Voltage Vce(On):1.85V, Power Dissipation Pd:285W, Collector Emitter Voltage V(Br)Ceo:1.2Kv, Transistor Case Rohs Compliant: Yes |Infineon FF50R12RT4HOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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Rochester Electronics | FF50R12 - Insulated Gate Bipolar Transistor Module RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 5753 |
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$63.6700 / $74.9100 | Buy Now |
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Ameya Holding Limited | Module: IGBT, transistor/transistor, IGBT half-bridge, Ic: 50A | 7 |
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RFQ |
Part Details for FF50R12RT4HOSA1
FF50R12RT4HOSA1 CAD Models
FF50R12RT4HOSA1 Part Data Attributes:
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FF50R12RT4HOSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
FF50R12RT4HOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-7
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | FLANGE MOUNT, R-XUFM-X5 | |
| Pin Count | 7 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| JESD-30 Code | R-XUFM-X5 | |
| Number of Elements | 2 | |
| Number of Terminals | 5 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 490 ns | |
| Turn-on Time-Nom (ton) | 185 ns |
Alternate Parts for FF50R12RT4HOSA1
This table gives cross-reference parts and alternative options found for FF50R12RT4HOSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FF50R12RT4HOSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FF50R12RT4 | Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | FF50R12RT4HOSA1 vs FF50R12RT4 |