Part Details for FF450R33TE3 by Infineon Technologies AG
Overview of FF450R33TE3 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Space Technology
Industrial Automation
Financial Technology (Fintech)
Transportation and Logistics
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Telecommunications
Medical Imaging
Automotive
Security and Surveillance
Audio and Video Systems
Aerospace and Defense
Communication and Networking
Robotics and Drones
Price & Stock for FF450R33TE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SP001265048
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EBV Elektronik | Trans IGBT Module N-CH 3.3KV 450A 4-Pin XHP100 (Alt: SP001265048) RoHS: Not Compliant Min Qty: 2 Package Multiple: 2 Lead time: 26 Weeks, 0 Days | EBV - 0 |
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Part Details for FF450R33TE3
FF450R33TE3 CAD Models
FF450R33TE3 Part Data Attributes:
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FF450R33TE3
Infineon Technologies AG
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Datasheet
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FF450R33TE3
Infineon Technologies AG
Insulated Gate Bipolar Transistor,
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Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2016-05-18 | |
Case Connection | ISOLATED | |
Collector-Emitter Voltage-Max | 3300 V | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 6.4 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-PUFM-X10 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 10 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 2170 ns | |
Turn-on Time-Nom (ton) | 710 ns | |
VCEsat-Max | 3.1 V |