Datasheets
FF450R12ME4P by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 675A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

Part Details for FF450R12ME4P by Infineon Technologies AG

Overview of FF450R12ME4P by Infineon Technologies AG

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Price & Stock for FF450R12ME4P

Part # Distributor Description Stock Price Buy
DISTI # 641-FF450R12ME4P
Mouser Electronics IGBT Modules 1200 V, 450 A dual IGBT module RoHS: Compliant 0
  • 6 $145.9700
  • 12 $142.5000
  • 30 $142.4900
  • 54 $141.9300
$141.9300 / $145.9700 Order Now

Part Details for FF450R12ME4P

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FF450R12ME4P Part Data Attributes

FF450R12ME4P Infineon Technologies AG
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FF450R12ME4P Infineon Technologies AG Insulated Gate Bipolar Transistor, 675A I(C), 1200V V(BR)CES, N-Channel, MODULE-11
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-XUFM-X11
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 675 A
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 Code R-XUFM-X11
Number of Elements 2
Number of Terminals 11
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 740 ns
Turn-on Time-Nom (ton) 290 ns

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