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Part Details for FF450R12ME4 by Infineon Technologies AG
Overview of FF450R12ME4 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FF450R12ME4
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
641-FF450R12ME4
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Mouser Electronics | IGBT Modules IGBT 1200V 450A RoHS: Compliant | 22 |
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$135.2600 / $140.3700 | Buy Now |
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Bristol Electronics | 20 |
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RFQ | ||
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Quest Components | 16 |
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$202.9120 / $221.9350 | Buy Now | |
|
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Win Source Electronics | IGBT MODULE 1200V 450A | 1529 |
|
$74.0280 / $91.1120 | Buy Now |
Part Details for FF450R12ME4
FF450R12ME4 CAD Models
FF450R12ME4 Part Data Attributes
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FF450R12ME4
Infineon Technologies AG
Buy Now
Datasheet
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FF450R12ME4
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 675A I(C), 1200V V(BR)CES, N-Channel, MODULE-11
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | MODULE-11 | |
| Pin Count | 11 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 675 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X11 | |
| Number of Elements | 2 | |
| Number of Terminals | 11 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2250 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 740 ns | |
| Turn-on Time-Nom (ton) | 290 ns | |
| VCEsat-Max | 2.1 V |