Datasheets
FF450R12KE4PHOSA1 by:

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-7

Part Details for FF450R12KE4PHOSA1 by Infineon Technologies AG

Overview of FF450R12KE4PHOSA1 by Infineon Technologies AG

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Price & Stock for FF450R12KE4PHOSA1

Part # Distributor Description Stock Price Buy
DISTI # FF450R12KE4PHOSA1-ND
DigiKey IGBT MODULE 1200V 450A Min Qty: 8 Lead time: 16 Weeks Container: Tray Temporarily Out of Stock
  • 8 $177.9412
  • 16 $166.6631
  • 32 $160.3978
$160.3978 / $177.9412 Buy Now
DISTI # FF450R12KE4PHOSA1
Avnet Americas Transistor IGBT Module N-CH 1200V 450A 20V Screw Mount Tray - Trays (Alt: FF450R12KE4PHOSA1) RoHS: Not Compliant Min Qty: 8 Package Multiple: 8 Lead time: 16 Weeks, 0 Days Container: Tray 0
  • 8 $192.3085
$192.3085 Buy Now
DISTI # 726-FF450R12KE4PHOSA
Mouser Electronics IGBT Modules MEDIUM POWER 62MM RoHS: Compliant 0
  • 8 $166.6600
  • 24 $160.3900
$160.3900 / $166.6600 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 8 Package Multiple: 8 Lead time: 16 Weeks Container: Tray 0
Tray
  • 8 $165.4300
$165.4300 Buy Now
DISTI # SP001139414
EBV Elektronik Transistor IGBT Module N-CH 1200V 450A 20V Screw Mount Tray (Alt: SP001139414) RoHS: Compliant Min Qty: 8 Package Multiple: 8 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FF450R12KE4PHOSA1

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FF450R12KE4PHOSA1 Part Data Attributes

FF450R12KE4PHOSA1 Infineon Technologies AG
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FF450R12KE4PHOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-7
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description MODULE-7
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard UL APPROVED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 800 ns
Turn-on Time-Nom (ton) 325 ns

Alternate Parts for FF450R12KE4PHOSA1

This table gives cross-reference parts and alternative options found for FF450R12KE4PHOSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FF450R12KE4PHOSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FF450R12KE4HOSA1 Insulated Gate Bipolar Transistor, 520A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG FF450R12KE4PHOSA1 vs FF450R12KE4HOSA1
FF450R12KE4EHOSA1 Insulated Gate Bipolar Transistor, 520A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG FF450R12KE4PHOSA1 vs FF450R12KE4EHOSA1
Part Number Description Manufacturer Compare
FF450R12KE4HOSA1 Insulated Gate Bipolar Transistor, 520A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG FF450R12KE4PHOSA1 vs FF450R12KE4HOSA1
FF450R12KE4EHOSA1 Insulated Gate Bipolar Transistor, 520A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG FF450R12KE4PHOSA1 vs FF450R12KE4EHOSA1

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