Datasheets
FF1200R12IE5BPSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-10

Part Details for FF1200R12IE5BPSA1 by Infineon Technologies AG

Overview of FF1200R12IE5BPSA1 by Infineon Technologies AG

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Price & Stock for FF1200R12IE5BPSA1

Part # Distributor Description Stock Price Buy
DISTI # 49AC0214
Newark Igbt, Module, N-Ch, 1.2Kv, 1.2Ka, Transistor Polarity:N Channel, Dc Collector Current:1.2Ka, Collector Emitter Saturation Voltage Vce(On):1.7V, Power Dissipation Pd:-, Collector Emitter Voltage V(Br)Ceo:1.2Kv, Transistor Case Rohs Compliant: Yes |Infineon FF1200R12IE5BPSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 2
  • 1 $1,298.4100
$1,298.4100 Buy Now
DISTI # 448-FF1200R12IE5BPSA1-ND
DigiKey IGBT MOD 1200V 2400A 20MW Min Qty: 1 Lead time: 13 Weeks Container: Tray 3
In Stock
  • 1 $674.2500
  • 12 $650.7300
$650.7300 / $674.2500 Buy Now
DISTI # FF1200R12IE5BPSA1
Avnet Americas Transistor IGBT Module N-CH 1200V 1200A 20V Screw Mount Tray - Trays (Alt: FF1200R12IE5BPSA1) RoHS: Not Compliant Min Qty: 3 Package Multiple: 3 Lead time: 13 Weeks, 0 Days Container: Tray 0
  • 3 $802.1250
$802.1250 Buy Now
Future Electronics 1200 V, 1200 A PrimePACK™ 2 dual IGBT module RoHS: Compliant pbFree: Yes Min Qty: 3 Package Multiple: 3 Container: Tray 0
Tray
  • 3 $677.3600
  • 6 $661.0300
$661.0300 / $677.3600 Buy Now
Rochester Electronics FF1200R12IE5 - PP, IHM I, XHP 1,7KV RoHS: Compliant Status: Active Min Qty: 1 2
  • 1 $754.6900
  • 25 $739.5900
  • 100 $709.4100
  • 500 $679.2200
  • 1,000 $641.4800
$641.4800 / $754.6900 Buy Now
DISTI # FF1200R12IE5BPSA1
Avnet Americas Transistor IGBT Module N-CH 1200V 1200A 20V Screw Mount Tray - Trays (Alt: FF1200R12IE5BPSA1) RoHS: Not Compliant Min Qty: 3 Package Multiple: 3 Lead time: 13 Weeks, 0 Days Container: Tray 0
  • 3 $802.1250
$802.1250 Buy Now
Ameya Holding Limited AG-PRIME2-5INDUSTRY 2
RFQ
DISTI # SP000976764
EBV Elektronik Transistor IGBT Module N-CH 1200V 1200A 20V Screw Mount Tray (Alt: SP000976764) RoHS: Compliant Min Qty: 3 Package Multiple: 3 Lead time: 14 Weeks, 0 Days EBV - 6
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 3 6
  • 1 $947.1500
  • 6 $881.3800
$881.3800 / $947.1500 Buy Now

Part Details for FF1200R12IE5BPSA1

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FF1200R12IE5BPSA1 Part Data Attributes:

FF1200R12IE5BPSA1 Infineon Technologies AG
Buy Now Datasheet
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FF1200R12IE5BPSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-10
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PUFM-X10
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 13 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 Code R-PUFM-X10
Number of Elements 2
Number of Terminals 10
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 680 ns
Turn-on Time-Nom (ton) 430 ns

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