Datasheets
FF1000R17IE4 by:

Insulated Gate Bipolar Transistor, 1390A I(C), 1700V V(BR)CES, N-Channel, MODULE-10

Part Details for FF1000R17IE4 by Infineon Technologies AG

Overview of FF1000R17IE4 by Infineon Technologies AG

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Price & Stock for FF1000R17IE4

Part # Distributor Description Stock Price Buy
DISTI # 641-FF1000R17IE4
Mouser Electronics IGBT Modules N-CH 1.7KV 1.39KA RoHS: Compliant 0
  • 1 $631.1100
  • 10 $607.3800
$607.3800 / $631.1100 Order Now
Onlinecomponents.com   RoHS: Compliant 1 Partner Stock
  • 1 $1,092.6900
  • 2 $1,048.9700
  • 4 $1,007.0300
  • 10 $966.7400
$966.7400 / $1,092.6900 Buy Now
Chip1Cloud PrimePACK?3 Modul und NTC 620
RFQ
MacroQuest Electronics   55
RFQ

Part Details for FF1000R17IE4

FF1000R17IE4 Part Data Attributes

FF1000R17IE4 Infineon Technologies AG
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FF1000R17IE4 Infineon Technologies AG Insulated Gate Bipolar Transistor, 1390A I(C), 1700V V(BR)CES, N-Channel, MODULE-10
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description MODULE-12
Pin Count 12
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 1390 A
Collector-Emitter Voltage-Max 1700 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 6250 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1890 ns
Turn-on Time-Nom (ton) 720 ns
VCEsat-Max 2.45 V

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