Part Details for FDZ4670 by Fairchild Semiconductor Corporation
Overview of FDZ4670 by Fairchild Semiconductor Corporation
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Part Details for FDZ4670
FDZ4670 CAD Models
FDZ4670 Part Data Attributes
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FDZ4670
Fairchild Semiconductor Corporation
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FDZ4670
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 25A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.50 X 4 MM, 0.85 MM HEIGHT, ROHS COMPLIANT, ULTRA THIN, FLFBGA, 30 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | BGA | |
| Package Description | 3.50 X 4 MM, 0.85 MM HEIGHT, ROHS COMPLIANT, ULTRA THIN, FLFBGA, 30 PIN | |
| Pin Count | 30 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 25 A | |
| Drain-source On Resistance-Max | 0.025 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XBGA-B30 | |
| Number of Elements | 1 | |
| Number of Terminals | 30 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | BALL | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |