Part Details for FDZ299P by Fairchild Semiconductor Corporation
Overview of FDZ299P by Fairchild Semiconductor Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FDZ299P
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 4.6A, 20V, 0.055ohm, P-Channel Power MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 20445 |
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$0.2707 / $0.3185 | Buy Now |
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Chip1Cloud | MOSFET P-CH 20V 4.6A BGA | 7000 |
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RFQ | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 760 |
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$0.5000 / $0.7700 | Buy Now |
Part Details for FDZ299P
FDZ299P CAD Models
FDZ299P Part Data Attributes:
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FDZ299P
Fairchild Semiconductor Corporation
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Datasheet
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FDZ299P
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 4.6A I(D), 20V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ULTRA THIN, BGA-9
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | BGA | |
| Package Description | ULTRA THIN, BGA-9 | |
| Pin Count | 9 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 48 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 4.6 A | |
| Drain-source On Resistance-Max | 0.055 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PBGA-B9 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 9 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | GRID ARRAY | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.7 W | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | BALL | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |