Part Details for FDZ2551N by Fairchild Semiconductor Corporation
Overview of FDZ2551N by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FDZ2551N
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 9 A, 20 V, 0.018 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | 2981 |
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$1.5750 / $4.5000 | Buy Now |
Part Details for FDZ2551N
FDZ2551N CAD Models
FDZ2551N Part Data Attributes:
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FDZ2551N
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FDZ2551N
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 9A I(D), 20V, 0.018ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ULTRA THIN, BGA-18
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | BGA | |
| Package Description | GRID ARRAY, R-PBGA-B18 | |
| Pin Count | 18 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 9 A | |
| Drain-source On Resistance-Max | 0.018 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PBGA-B18 | |
| JESD-609 Code | e0 | |
| Number of Elements | 2 | |
| Number of Terminals | 18 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 3 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | BALL | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDZ2551N
This table gives cross-reference parts and alternative options found for FDZ2551N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDZ2551N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDZ2553N | Power Field-Effect Transistor, 9.6A I(D), 20V, 0.014ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ULTRA THIN, BGA-18 | Fairchild Semiconductor Corporation | FDZ2551N vs FDZ2553N |