Part Details for FDZ209N by Fairchild Semiconductor Corporation
Overview of FDZ209N by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FDZ209N
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 4A, 60V, 0.08ohm, N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 20644 |
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$0.7445 / $0.8759 | Buy Now |
Part Details for FDZ209N
FDZ209N CAD Models
FDZ209N Part Data Attributes:
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FDZ209N
Fairchild Semiconductor Corporation
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Datasheet
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FDZ209N
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 4A I(D), 60V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ULTRA THIN, BGA-12
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | BGA | |
Package Description | ULTRA THIN, BGA-12 | |
Pin Count | 12 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 90 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 4 A | |
Drain-source On Resistance-Max | 0.08 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PBGA-B12 | |
JESD-609 Code | e2 | |
Number of Elements | 1 | |
Number of Terminals | 12 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN SILVER | |
Terminal Form | BALL | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |