Datasheets
FDZ209N by:

Power Field-Effect Transistor, 4A I(D), 60V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ULTRA THIN, BGA-12

Part Details for FDZ209N by Fairchild Semiconductor Corporation

Overview of FDZ209N by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for FDZ209N

Part # Distributor Description Stock Price Buy
Rochester Electronics 4A, 60V, 0.08ohm, N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 20644
  • 1 $0.8759
  • 25 $0.8584
  • 100 $0.8233
  • 500 $0.7883
  • 1,000 $0.7445
$0.7445 / $0.8759 Buy Now

Part Details for FDZ209N

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FDZ209N Part Data Attributes:

FDZ209N Fairchild Semiconductor Corporation
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FDZ209N Fairchild Semiconductor Corporation Power Field-Effect Transistor, 4A I(D), 60V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ULTRA THIN, BGA-12
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code BGA
Package Description ULTRA THIN, BGA-12
Pin Count 12
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 90 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 4 A
Drain-source On Resistance-Max 0.08 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PBGA-B12
JESD-609 Code e2
Number of Elements 1
Number of Terminals 12
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style GRID ARRAY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN SILVER
Terminal Form BALL
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON

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