Datasheets
FDZ208P by:

12.5A, 30V, 0.0105ohm, P-CHANNEL, Si, POWER, MOSFET, ULTRA THIN, BGA-30

Part Details for FDZ208P by Rochester Electronics LLC

Overview of FDZ208P by Rochester Electronics LLC

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Part Details for FDZ208P

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FDZ208P Part Data Attributes:

FDZ208P Rochester Electronics LLC
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FDZ208P Rochester Electronics LLC 12.5A, 30V, 0.0105ohm, P-CHANNEL, Si, POWER, MOSFET, ULTRA THIN, BGA-30
Pbfree Code No
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Part Package Code BGA
Package Description ULTRA THIN, BGA-30
Pin Count 30
Reach Compliance Code unknown
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 12.5 A
Drain-source On Resistance-Max 0.0105 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PBGA-B30
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 30
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style GRID ARRAY
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 60 A
Qualification Status COMMERCIAL
Surface Mount YES
Terminal Finish NOT SPECIFIED
Terminal Form BALL
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDZ208P

This table gives cross-reference parts and alternative options found for FDZ208P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDZ208P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDZ206P 13A, 20V, 0.0095ohm, P-CHANNEL, Si, POWER, MOSFET, ULTRA THIN, BGA-30 Rochester Electronics LLC FDZ208P vs FDZ206P
FDZ206P_NL Power Field-Effect Transistor, 13A I(D), 20V, 0.0095ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ULTRA THIN, BGA-30 Fairchild Semiconductor Corporation FDZ208P vs FDZ206P_NL
FDMC7672 Power Field-Effect Transistor, 16.9A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, ROHS COMPLIANT, MLP, 8 PIN Fairchild Semiconductor Corporation FDZ208P vs FDMC7672
FDMC7692S Power Field-Effect Transistor, 12.5A I(D), 30V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, ROHS COMPLIANT, MLP, 8 PIN Fairchild Semiconductor Corporation FDZ208P vs FDMC7692S
FDMC7692 Power Field-Effect Transistor, 13.3A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, ROHS COMPLIANT, MLP, 8 PIN Fairchild Semiconductor Corporation FDZ208P vs FDMC7692
FDMC6679AZ Power Field-Effect Transistor, 11.5A I(D), 30V, 0.01ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, ROHS COMPLIANT, MLP, 8 PIN Fairchild Semiconductor Corporation FDZ208P vs FDMC6679AZ

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