Part Details for FDZ206P_NL by Fairchild Semiconductor Corporation
Overview of FDZ206P_NL by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FDZ206P_NL
FDZ206P_NL CAD Models
FDZ206P_NL Part Data Attributes
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FDZ206P_NL
Fairchild Semiconductor Corporation
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Datasheet
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FDZ206P_NL
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 13A I(D), 20V, 0.0095ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ULTRA THIN, BGA-30
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | BGA | |
Package Description | GRID ARRAY, R-PBGA-B30 | |
Pin Count | 30 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 13 A | |
Drain-source On Resistance-Max | 0.0095 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PBGA-B30 | |
Number of Elements | 1 | |
Number of Terminals | 30 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 1.25 W | |
Pulsed Drain Current-Max (IDM) | 60 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | BALL | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDZ206P_NL
This table gives cross-reference parts and alternative options found for FDZ206P_NL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDZ206P_NL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FDZ206P | Power Field-Effect Transistor, 13A I(D), 20V, 0.0095ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ULTRA THIN, BGA-30 | Fairchild Semiconductor Corporation | FDZ206P_NL vs FDZ206P |
FDMC7672S | Power Field-Effect Transistor, 14.8A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, ROHS COMPLIANT, MLP, 8 PIN | Fairchild Semiconductor Corporation | FDZ206P_NL vs FDMC7672S |
FDMC7672 | Power Field-Effect Transistor, 16.9A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, ROHS COMPLIANT, MLP, 8 PIN | Fairchild Semiconductor Corporation | FDZ206P_NL vs FDMC7672 |
FDZ208P | Power Field-Effect Transistor, 12.5A I(D), 30V, 0.0105ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ULTRA THIN, BGA-30 | Fairchild Semiconductor Corporation | FDZ206P_NL vs FDZ208P |
FDMC7692 | Power Field-Effect Transistor, 13.3A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, ROHS COMPLIANT, MLP, 8 PIN | Fairchild Semiconductor Corporation | FDZ206P_NL vs FDMC7692 |