Datasheets
FDZ203N by: Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 7.5A I(D), 20V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ULTRA THIN, BGA-9

Part Details for FDZ203N by Fairchild Semiconductor Corporation

Overview of FDZ203N by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for FDZ203N

Part # Distributor Description Stock Price Buy
Quest Components 7.5 A, 20 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET 576
  • 1 $0.7875
  • 107 $0.3675
  • 545 $0.3281
$0.3281 / $0.7875 Buy Now
Quest Components 7.5 A, 20 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET 39627
  • 1 $1.3125
  • 1,525 $0.4594
  • 3,266 $0.3938
$0.3938 / $1.3125 Buy Now

Part Details for FDZ203N

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FDZ203N Part Data Attributes

FDZ203N Fairchild Semiconductor Corporation
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FDZ203N Fairchild Semiconductor Corporation Power Field-Effect Transistor, 7.5A I(D), 20V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ULTRA THIN, BGA-9
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code BGA
Package Description ULTRA THIN, BGA-9
Pin Count 9
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 7.5 A
Drain-source On Resistance-Max 0.018 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PBGA-B9
JESD-609 Code e2
Number of Elements 1
Number of Terminals 9
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style GRID ARRAY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.6 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN SILVER
Terminal Form BALL
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON

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