Datasheets
FDZ201N by:

Power Field-Effect Transistor, 9A I(D), 20V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ULTRA THIN, BGA-12

Part Details for FDZ201N by Fairchild Semiconductor Corporation

Overview of FDZ201N by Fairchild Semiconductor Corporation

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Price & Stock for FDZ201N

Part # Distributor Description Stock Price Buy
Bristol Electronics   2281
RFQ
Quest Components 9 A, 20 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET 1824
  • 1 $2.1840
  • 184 $0.8736
  • 917 $0.7644
$0.7644 / $2.1840 Buy Now
NexGen Digital   32
RFQ

Part Details for FDZ201N

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FDZ201N Part Data Attributes:

FDZ201N Fairchild Semiconductor Corporation
Buy Now Datasheet
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FDZ201N Fairchild Semiconductor Corporation Power Field-Effect Transistor, 9A I(D), 20V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ULTRA THIN, BGA-12
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code BGA
Package Description ULTRA THIN, BGA-12
Pin Count 12
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.018 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PBGA-B12
JESD-609 Code e2
Number of Elements 1
Number of Terminals 12
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style GRID ARRAY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.7 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN SILVER
Terminal Form BALL
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON

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