Datasheets
FDW2510NZ by:
Fairchild Semiconductor Corporation
Fairchild Semiconductor Corporation
Rochester Electronics LLC
Not Found

Power Field-Effect Transistor, 6.4A I(D), 20V, 0.024ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8

Part Details for FDW2510NZ by Fairchild Semiconductor Corporation

Overview of FDW2510NZ by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for FDW2510NZ

Part # Distributor Description Stock Price Buy
Quest Components 6.4 A, 20 V, 0.024 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 5864
  • 1 $1.2513
  • 960 $0.5756
  • 1,738 $0.5255
$0.5255 / $1.2513 Buy Now
Rochester Electronics Power Field-Effect Transistor, 6.4A, 20V, 0.024ohm, 2-Element, N-Channel, MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 19149
  • 1 $0.7476
  • 25 $0.7326
  • 100 $0.7027
  • 500 $0.6728
  • 1,000 $0.6355
$0.6355 / $0.7476 Buy Now

Part Details for FDW2510NZ

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FDW2510NZ Part Data Attributes

FDW2510NZ Fairchild Semiconductor Corporation
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FDW2510NZ Fairchild Semiconductor Corporation Power Field-Effect Transistor, 6.4A I(D), 20V, 0.024ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TSSOP
Package Description TSSOP-8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 6.4 A
Drain-source On Resistance-Max 0.024 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.6 W
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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