Part Details for FDW2510NZ by Fairchild Semiconductor Corporation
Overview of FDW2510NZ by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for FDW2510NZ
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 6.4 A, 20 V, 0.024 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | 5864 |
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$0.5255 / $1.2513 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 6.4A, 20V, 0.024ohm, 2-Element, N-Channel, MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 19149 |
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$0.6355 / $0.7476 | Buy Now |
Part Details for FDW2510NZ
FDW2510NZ CAD Models
FDW2510NZ Part Data Attributes
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FDW2510NZ
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FDW2510NZ
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 6.4A I(D), 20V, 0.024ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8
Select a part to compare: |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TSSOP | |
Package Description | TSSOP-8 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 6.4 A | |
Drain-source On Resistance-Max | 0.024 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.6 W | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |