Datasheets
FDW2508PB by: Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 6A I(D), 12V, 0.03ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSSOP, 8 PIN

Part Details for FDW2508PB by Fairchild Semiconductor Corporation

Results Overview of FDW2508PB by Fairchild Semiconductor Corporation

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

FDW2508PB Information

FDW2508PB by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for FDW2508PB

FDW2508PB CAD Models

There are no models available for this part yet.

Sign in to request this CAD model.

Register or Sign In

FDW2508PB Part Data Attributes

FDW2508PB Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FDW2508PB Fairchild Semiconductor Corporation Power Field-Effect Transistor, 6A I(D), 12V, 0.03ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSSOP, 8 PIN
Select a part to compare:
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Package Description ROHS COMPLIANT, TSSOP, 8 PIN
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 12 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1 W
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

FDW2508PB Related Parts

FDW2508PB Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the FDW2508PB is -40°C to 150°C.

  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a thermally conductive interface material, and keeping the device within its recommended operating temperature range.

  • To minimize EMI, it's recommended to use a multi-layer PCB with a solid ground plane, keep the device away from noise sources, and use shielded cables or twisted pairs for connections. Additionally, ensure that the PCB layout follows good high-frequency design practices, such as minimizing trace lengths and using bypass capacitors.

  • Yes, the FDW2508PB is suitable for switching power supply applications due to its high switching frequency, low RDS(on), and high current capability. However, it's essential to follow proper design guidelines and ensure that the device is operated within its recommended specifications.

  • To protect the FDW2508PB from overvoltage and overcurrent conditions, it's recommended to use voltage clamping devices, such as zener diodes or transient voltage suppressors, and current limiting resistors or fuses. Additionally, ensure that the device is operated within its recommended specifications and follow proper design guidelines for overvoltage and overcurrent protection.