Datasheets
FDW2501N by:

Small Signal Field-Effect Transistor, 6A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8

Part Details for FDW2501N by Fairchild Semiconductor Corporation

Overview of FDW2501N by Fairchild Semiconductor Corporation

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Price & Stock for FDW2501N

Part # Distributor Description Stock Price Buy
Quest Components 6000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 6
  • 1 $1.5775
  • 4 $1.4513
$1.4513 / $1.5775 Buy Now
Quest Components 6000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 1046
  • 1 $1.7410
  • 58 $0.8705
  • 231 $0.6964
$0.6964 / $1.7410 Buy Now
Rochester Electronics Small Signal Field-Effect Transistor, 6A, 20V, 2-Element, N-Channel, MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 343133
  • 1 $0.9898
  • 25 $0.9700
  • 100 $0.9304
  • 500 $0.8908
  • 1,000 $0.8413
$0.8413 / $0.9898 Buy Now

Part Details for FDW2501N

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FDW2501N Part Data Attributes:

FDW2501N Fairchild Semiconductor Corporation
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FDW2501N Fairchild Semiconductor Corporation Small Signal Field-Effect Transistor, 6A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TSSOP
Package Description TSSOP-8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.018 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDW2501N

This table gives cross-reference parts and alternative options found for FDW2501N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDW2501N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDW2501N_NL Small Signal Field-Effect Transistor, 6A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 Fairchild Semiconductor Corporation FDW2501N vs FDW2501N_NL
Part Number Description Manufacturer Compare
FDS6990AS_NL Small Signal Field-Effect Transistor, 7.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 Fairchild Semiconductor Corporation FDW2501N vs FDS6990AS_NL
2N6485 Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, Solitron Devices Inc FDW2501N vs 2N6485
2N5197 Small Signal Field-Effect Transistor, N-Channel, Silicon, Junction FET, TO-71, TO-71, 8 PIN InterFET Corporation FDW2501N vs 2N5197
SI3457CDV-T1-GE3 Small Signal Field-Effect Transistor, 5.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6 Vishay Intertechnologies FDW2501N vs SI3457CDV-T1-GE3
UPA1917TE-A 6000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-95, 6 PIN Renesas Electronics Corporation FDW2501N vs UPA1917TE-A
NTGS4111PT1 3700mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 318G-02, TSOP-6 onsemi FDW2501N vs NTGS4111PT1
FDW2503N Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, TSSOP-8 Fairchild Semiconductor Corporation FDW2501N vs FDW2503N
FDS6990A_NL Small Signal Field-Effect Transistor, 7.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDW2501N vs FDS6990A_NL
2N5908 Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-78, Solitron Devices Inc FDW2501N vs 2N5908
ZXMD65N02N8TA Small Signal Field-Effect Transistor, 6.6A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Diodes Incorporated FDW2501N vs ZXMD65N02N8TA

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