Part Details for FDU8880 by Fairchild Semiconductor Corporation
Overview of FDU8880 by Fairchild Semiconductor Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (5 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FDU8880
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 35 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | 1532 |
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$0.3989 / $0.9573 | Buy Now |
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Rochester Electronics | 35A, 30V, N-Channel Power MOSFET, TO-251AA ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 336949 |
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$0.4254 / $0.5005 | Buy Now |
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Chip1Cloud | MOSFET N-CH 30V 58A I-PAK | 2170 |
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RFQ |
Part Details for FDU8880
FDU8880 CAD Models
FDU8880 Part Data Attributes
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FDU8880
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FDU8880
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 35A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-251AA | |
| Package Description | IPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 53 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 35 A | |
| Drain-source On Resistance-Max | 0.013 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 55 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDU8880
This table gives cross-reference parts and alternative options found for FDU8880. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDU8880, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDU8880 | 35A, 30V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, IPAK-3 | Rochester Electronics LLC | FDU8880 vs FDU8880 |
| ISL9N310AD3 | 35A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | Rochester Electronics LLC | FDU8880 vs ISL9N310AD3 |
| ISL9N310AD3 | 35A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | Intersil Corporation | FDU8880 vs ISL9N310AD3 |
| ISL9N310AD3 | Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | Fairchild Semiconductor Corporation | FDU8880 vs ISL9N310AD3 |
| FDU8880_NL | Power Field-Effect Transistor, 35A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, IPAK-3 | Fairchild Semiconductor Corporation | FDU8880 vs FDU8880_NL |