Datasheets
FDU8780 by:

Power Field-Effect Transistor, 35A I(D), 25V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, IPAK-3

Part Details for FDU8780 by Fairchild Semiconductor Corporation

Overview of FDU8780 by Fairchild Semiconductor Corporation

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Applications Space Technology Industrial Automation Aerospace and Defense Transportation and Logistics Renewable Energy Automotive Motor control systems Robotics and Drones

Price & Stock for FDU8780

Part # Distributor Description Stock Price Buy
Rochester Electronics 35A, 25V, 0.012ohm, N-Channel Power MOSFET, TO-251AA ' RoHS: Compliant Status: Obsolete Min Qty: 1 81309
  • 1 $0.3185
  • 25 $0.3121
  • 100 $0.2994
  • 500 $0.2867
  • 1,000 $0.2707
$0.2707 / $0.3185 Buy Now

Part Details for FDU8780

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FDU8780 Part Data Attributes

FDU8780 Fairchild Semiconductor Corporation
Buy Now Datasheet
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FDU8780 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 35A I(D), 25V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, IPAK-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-251AA
Package Description ROHS COMPLIANT, IPAK-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 73 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 25 V
Drain Current-Max (ID) 35 A
Drain-source On Resistance-Max 0.012 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 50 W
Pulsed Drain Current-Max (IDM) 224 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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