Part Details for FDU8770 by Fairchild Semiconductor Corporation
Overview of FDU8770 by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Price & Stock for FDU8770
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 35A, 25V, 0.0055ohm, N-Channel Power MOSFET, TO-251AA ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 7050 |
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$1.2800 / $1.5000 | Buy Now |
Part Details for FDU8770
FDU8770 CAD Models
FDU8770 Part Data Attributes
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FDU8770
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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FDU8770
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 35A I(D), 25V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, IPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-251AA | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 113 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 35 A | |
| Drain-source On Resistance-Max | 0.0055 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 115 W | |
| Pulsed Drain Current-Max (IDM) | 407 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDU8770
This table gives cross-reference parts and alternative options found for FDU8770. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDU8770, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NDB706AL | Texas Instruments | Check for Price | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | FDU8770 vs NDB706AL |
| IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | FDU8770 vs IPB80N06S2LH5ATMA1 |
| FQA11N90 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 11.4A I(D), 900V, 0.96ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TO-3P, 3 PIN | FDU8770 vs FQA11N90 |
| FQAF7N80 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | FDU8770 vs FQAF7N80 |
| SPP80N03S2L-05 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | FDU8770 vs SPP80N03S2L-05 |
| NDP7050L | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 75A I(D), 50V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | FDU8770 vs NDP7050L |
| FQAF65N06 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 49A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | FDU8770 vs FQAF65N06 |
| FDP14N60 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 14A I(D), 600V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | FDU8770 vs FDP14N60 |
| IXFH32N50 | IXYS Corporation | $1.1612 | Power Field-Effect Transistor, 32A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | FDU8770 vs IXFH32N50 |
| IXFX66N50Q2 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 66A I(D), 500V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN | FDU8770 vs IXFX66N50Q2 |