Part Details for FDU2N60C by Fairchild Semiconductor Corporation
Overview of FDU2N60C by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FDU2N60C
FDU2N60C CAD Models
FDU2N60C Part Data Attributes
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FDU2N60C
Fairchild Semiconductor Corporation
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Datasheet
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FDU2N60C
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, IPAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 1.9 A | |
| Drain-source On Resistance-Max | 4.7 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 7.6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDU2N60C
This table gives cross-reference parts and alternative options found for FDU2N60C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDU2N60C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| STD1HNK60Z-1 | 1.9A, 600V, 4.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 | STMicroelectronics | FDU2N60C vs STD1HNK60Z-1 |
| 2N65LL-TN3-R | Power Field-Effect Transistor, 2A I(D), 650V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3 | Unisonic Technologies Co Ltd | FDU2N60C vs 2N65LL-TN3-R |
| 2N60LL-TMA-T | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, LEAD FREE, TO-251L, 3 PIN | Unisonic Technologies Co Ltd | FDU2N60C vs 2N60LL-TMA-T |
| STP2HNC60 | 2.2A, 600V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | FDU2N60C vs STP2HNC60 |
| AP4002S | TRANSISTOR 2 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power | Advanced Power Electronics Corp | FDU2N60C vs AP4002S |
| TSM2N60CPRO | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Taiwan Semiconductor | FDU2N60C vs TSM2N60CPRO |
| AP4002P | TRANSISTOR 2 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power | Advanced Power Electronics Corp | FDU2N60C vs AP4002P |
| 2N65L-TMA-T | Power Field-Effect Transistor, 2A I(D), 650V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, TO-251L, 3 PIN | Unisonic Technologies Co Ltd | FDU2N60C vs 2N65L-TMA-T |
| SSP2N60AJ69Z | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FDU2N60C vs SSP2N60AJ69Z |
| 2N60G-TM3-T | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, HALOGEN FREE PACKAGE-3 | Unisonic Technologies Co Ltd | FDU2N60C vs 2N60G-TM3-T |