Datasheets
FDT1600N10ALZ by:

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4

Part Details for FDT1600N10ALZ by Fairchild Semiconductor Corporation

Overview of FDT1600N10ALZ by Fairchild Semiconductor Corporation

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Part Details for FDT1600N10ALZ

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FDT1600N10ALZ Part Data Attributes

FDT1600N10ALZ Fairchild Semiconductor Corporation
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FDT1600N10ALZ Fairchild Semiconductor Corporation Power Field-Effect Transistor, 5.6A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOT-223
Package Description ROHS COMPLIANT PACKAGE-4
Pin Count 4
Manufacturer Package Code MOLDED PACKAGE, SOT-223, 4 LEAD
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 9.2 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 5.6 A
Drain-source On Resistance-Max 0.16 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 10.42 W
Pulsed Drain Current-Max (IDM) 22.4 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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