Part Details for FDS9412A by Fairchild Semiconductor Corporation
Overview of FDS9412A by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDS9412A
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 40 |
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RFQ | ||
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Component Electronics, Inc | IN STOCK SHIP TODAY | 9 |
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$0.7500 / $1.1500 | Buy Now |
Part Details for FDS9412A
FDS9412A CAD Models
FDS9412A Part Data Attributes:
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FDS9412A
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FDS9412A
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 8A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | SOT | |
Package Description | ROHS COMPLIANT, SO-8 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 54 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 0.03 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2.5 W | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDS9412A
This table gives cross-reference parts and alternative options found for FDS9412A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS9412A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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AP2304AGN | TRANSISTOR 2.5 A, 30 V, 0.117 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE PACKAGE-3, FET General Purpose Power | Advanced Power Electronics Corp | FDS9412A vs AP2304AGN |
IRF7201PBF | Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | FDS9412A vs IRF7201PBF |
DMG3402L-13 | Power Field-Effect Transistor | Diodes Incorporated | FDS9412A vs DMG3402L-13 |
IRF7201TR | Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, | Infineon Technologies AG | FDS9412A vs IRF7201TR |
AP2304AGN-HF | TRANSISTOR 2.5 A, 30 V, 0.117 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power | Advanced Power Electronics Corp | FDS9412A vs AP2304AGN-HF |
IRF7201TRPBF | Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | Infineon Technologies AG | FDS9412A vs IRF7201TRPBF |
MMSF6N01HD | Power Field-Effect Transistor, 6A I(D), 12V, 0.045ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 751-05, SOIC-8 | Motorola Semiconductor Products | FDS9412A vs MMSF6N01HD |
AP2306AGN-HF | TRANSISTOR 5 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power | Advanced Power Electronics Corp | FDS9412A vs AP2306AGN-HF |
DMN3052L-7 | Power Field-Effect Transistor, 5.4A I(D), 30V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Diodes Incorporated | FDS9412A vs DMN3052L-7 |
AP2306AGEN | TRANSISTOR 4.1 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power | Advanced Power Electronics Corp | FDS9412A vs AP2306AGEN |