Datasheets
FDS8958A by:

Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8, 8 PIN

Part Details for FDS8958A by Fairchild Semiconductor Corporation

Overview of FDS8958A by Fairchild Semiconductor Corporation

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Price & Stock for FDS8958A

Part # Distributor Description Stock Price Buy
Bristol Electronics   4007
RFQ
Bristol Electronics   1450
RFQ
Quest Components MOSFET Transistor, Pair, Complementary, SO 1918
  • 1 $0.6225
  • 146 $0.2905
  • 689 $0.2594
$0.2594 / $0.6225 Buy Now
Quest Components MOSFET Transistor, Pair, Complementary, SO 1160
  • 1 $1.0375
  • 97 $0.5188
  • 387 $0.4150
$0.4150 / $1.0375 Buy Now
Quest Components MOSFET Transistor, Pair, Complementary, SO 18
  • 1 $2.2400
  • 3 $1.7920
  • 12 $1.3440
$1.3440 / $2.2400 Buy Now
Quest Components MOSFET Transistor, Pair, Complementary, SO 24
  • 1 $18.7650
  • 5 $16.6800
  • 16 $15.4290
$15.4290 / $18.7650 Buy Now
Rochester Electronics Power Field-Effect Transistor, 7A, 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, MOSFET RoHS: Compliant Status: Active Min Qty: 1 132500
  • 1 $0.3254
  • 25 $0.3189
  • 100 $0.3059
  • 500 $0.2929
  • 1,000 $0.2766
$0.2766 / $0.3254 Buy Now
Chip 1 Exchange INSTOCK 3775
RFQ
Chip 1 Exchange INSTOCK 2090
RFQ
Sense Electronic Company Limited SOP8 2500
RFQ
Win Source Electronics MOSFET N/P-CH 30V 7A/5A 8SOIC / Trans MOSFET N/P-CH 30V 7A/5A 8-Pin SOIC T/R 27054
  • 50 $1.0740
  • 115 $0.8820
  • 180 $0.8540
  • 245 $0.8270
  • 315 $0.7990
  • 420 $0.7160
$0.7160 / $1.0740 Buy Now

Part Details for FDS8958A

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FDS8958A Part Data Attributes:

FDS8958A Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FDS8958A Fairchild Semiconductor Corporation Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8, 8 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOT
Package Description ROHS COMPLIANT, SO-8, 8 PIN
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 54 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 7 A
Drain-source On Resistance-Max 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDS8958A

This table gives cross-reference parts and alternative options found for FDS8958A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS8958A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDS8958A 7A, 30V, 0.028ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SO-8, 8 PIN Rochester Electronics LLC FDS8958A vs FDS8958A
FDS8958A Dual N & P-Channel PowerTrench® MOSFET 30V, 2500-REEL onsemi FDS8958A vs FDS8958A
Part Number Description Manufacturer Compare
IRF7389TRPBF Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, International Rectifier FDS8958A vs IRF7389TRPBF
NDS8958 Power Field-Effect Transistor, 5.3A I(D), 30V, 0.035ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS8958A vs NDS8958
IRF7319 Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Infineon Technologies AG FDS8958A vs IRF7319
IRF7389 Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier FDS8958A vs IRF7389
IRF7389TR Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Infineon Technologies AG FDS8958A vs IRF7389TR
IRF7389 Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Infineon Technologies AG FDS8958A vs IRF7389
IRF7319PBF Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier FDS8958A vs IRF7319PBF
IRF7319 Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier FDS8958A vs IRF7319
IRF7389TR Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA International Rectifier FDS8958A vs IRF7389TR
IRF7319TRPBF Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, International Rectifier FDS8958A vs IRF7319TRPBF

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