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Part Details for FDS8958A-F085 by onsemi
Overview of FDS8958A-F085 by onsemi
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FDS8958A-F085
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31Y1410
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Newark | Mosfet, N & P-Ch, 30V, 7A, Soic-8, Channel Type:Complementary N And P Channel, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:30V, Continuous Drain Current Id N Channel:7A, No. Of Pins:8Pins Rohs Compliant: Yes |Onsemi FDS8958A-F085 Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
85AC1783
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Newark | Mosfet, N & P-Ch, 30V, 7A, 2W, Soic, Transistor Polarity:N And P Channel, Continuous Drain Current Id:7A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.019Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.9V, Power Rohs Compliant: Yes |Onsemi FDS8958A-F085 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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LCSC | 30V 28m7A10V 900mW 3V250uA SOP-8 MOSFETs ROHS | 5 |
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$2.1964 / $3.3199 | Buy Now |
Part Details for FDS8958A-F085
FDS8958A-F085 CAD Models
FDS8958A-F085 Part Data Attributes:
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FDS8958A-F085
onsemi
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Datasheet
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FDS8958A-F085
onsemi
Dual N & P-Channel PowerTrench® MOSFET 30V, SO 8L NB, 2500-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SO 8L NB | |
| Package Description | SOP-8 | |
| Manufacturer Package Code | 751EB | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 54 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 0.028 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |