Datasheets
FDS8926A by:

Power Field-Effect Transistor, 5.5A I(D), 30V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

Part Details for FDS8926A by Fairchild Semiconductor Corporation

Overview of FDS8926A by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Renewable Energy Automotive

Price & Stock for FDS8926A

Part # Distributor Description Stock Price Buy
Quest Components MOSFET Transistor, Matched Pair, N-Channel, SO 2379
  • 1 $1.2513
  • 960 $0.5756
  • 1,738 $0.5255
$0.5255 / $1.2513 Buy Now
Quest Components MOSFET Transistor, Matched Pair, N-Channel, SO 1898
  • 1 $2.0020
  • 649 $0.8258
  • 1,212 $0.7508
$0.7508 / $2.0020 Buy Now
Quest Components MOSFET Transistor, Matched Pair, N-Channel, SO 88
  • 1 $2.0020
  • 18 $1.2513
  • 61 $1.1011
$1.1011 / $2.0020 Buy Now
Quest Components MOSFET Transistor, Matched Pair, N-Channel, SO 427
  • 1 $2.4232
  • 114 $1.2116
  • 249 $1.1207
$1.1207 / $2.4232 Buy Now
Rochester Electronics Power Field-Effect Transistor, 5.5A, 30V, 0.03ohm, 2-Element, N-Channel, MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 10263
  • 1 $0.7850
  • 25 $0.7693
  • 100 $0.7379
  • 500 $0.7065
  • 1,000 $0.6673
$0.6673 / $0.7850 Buy Now
ComSIT USA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 5.5A I(D), 30V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Europe - 2425
RFQ
Chip1Cloud MOSFET 2N-CH 30V 5.5A 8-SO 235700
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 3
Buy Now

Part Details for FDS8926A

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FDS8926A Part Data Attributes:

FDS8926A Fairchild Semiconductor Corporation
Buy Now Datasheet
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FDS8926A Fairchild Semiconductor Corporation Power Field-Effect Transistor, 5.5A I(D), 30V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOIC
Package Description SOIC-8
Pin Count 8
Manufacturer Package Code 8LD, SOIC,JEDEC MS-012, .150" NARROW BODY, DUAL DAP
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 5.5 A
Drain-source On Resistance-Max 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.6 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDS8926A

This table gives cross-reference parts and alternative options found for FDS8926A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS8926A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AF9926NSL Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 Integrated Circuit Technology Corp FDS8926A vs AF9926NSL
IRF7311HR Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier FDS8926A vs IRF7311HR
FY6BCH-02E Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 Powerex Power Semiconductors FDS8926A vs FY6BCH-02E
IRF7530TRPBF-EL Power Field-Effect Transistor, 5.4A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 Infineon Technologies AG FDS8926A vs IRF7530TRPBF-EL
SI9926DYS62Z Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS8926A vs SI9926DYS62Z
LDN9926ET1G Power Field-Effect Transistor, 6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8 LRC Leshan Radio Co Ltd FDS8926A vs LDN9926ET1G
FDS9926AL99Z Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS8926A vs FDS9926AL99Z
WTM4248W Power Field-Effect Transistor, 6A I(D), 20V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8 WEITRON INTERNATIONAL CO., LTD. FDS8926A vs WTM4248W
AF9926NS Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Integrated Circuit Technology Corp FDS8926A vs AF9926NS
FDS9926AF011 Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation FDS8926A vs FDS9926AF011

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