Part Details for FDS8858CZ by Fairchild Semiconductor Corporation
Overview of FDS8858CZ by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FDS8858CZ
| Part # | Distributor | Description | Stock | Price | Buy | |
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Win Source Electronics | Trans MOSFET N/P-CH 30V 8.6A/7.3A 8-Pin SOIC T/R / MOSFET N/P-CH 30V 8.6A/7.3A 8-SO | 170970 |
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$0.7470 / $1.1200 | Buy Now |
Part Details for FDS8858CZ
FDS8858CZ CAD Models
FDS8858CZ Part Data Attributes:
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FDS8858CZ
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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FDS8858CZ
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 8.6A I(D), 30V, 0.017ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, 8 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | SOIC | |
| Package Description | ROHS COMPLIANT, 8 PIN | |
| Pin Count | 8 | |
| Manufacturer Package Code | 8LD, JEDEC MS-012, .150"NARROW BODY | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 8.6 A | |
| Drain-source On Resistance-Max | 0.017 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDS8858CZ
This table gives cross-reference parts and alternative options found for FDS8858CZ. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS8858CZ, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF7471TR | Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | FDS8858CZ vs IRF7471TR |
| BSO4410 | Power Field-Effect Transistor, 11.1A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Infineon Technologies AG | FDS8858CZ vs BSO4410 |
| IRF7471TRPBF | Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | FDS8858CZ vs IRF7471TRPBF |
| IRF7842 | Power Field-Effect Transistor, 18A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | FDS8858CZ vs IRF7842 |
| SI4800/T3 | TRANSISTOR 9 A, 30 V, 0.0185 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power | NXP Semiconductors | FDS8858CZ vs SI4800/T3 |
| IRF7460TRPBF | Power Field-Effect Transistor, 12A I(D), 20V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | FDS8858CZ vs IRF7460TRPBF |
| 2SK2556 | Power Field-Effect Transistor, 6A I(D), 30V, 0.078ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET | SANYO Electric Co Ltd | FDS8858CZ vs 2SK2556 |
| SI4890DY-T1-E3 | Power Field-Effect Transistor, 11A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Vishay Intertechnologies | FDS8858CZ vs SI4890DY-T1-E3 |
| FY7AAJ-03 | Power Field-Effect Transistor, 7A I(D), 30V, 0.03ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET | Mitsubishi Electric | FDS8858CZ vs FY7AAJ-03 |
| UPA2700GR-A | 17A, 30V, 0.0084ohm, N-CHANNEL, Si, POWER, MOSFET, POWER, SOP-8 | Renesas Electronics Corporation | FDS8858CZ vs UPA2700GR-A |