Datasheets
FDS8813NZ by:

Small Signal Field-Effect Transistor, 18.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8

Part Details for FDS8813NZ by Fairchild Semiconductor Corporation

Overview of FDS8813NZ by Fairchild Semiconductor Corporation

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Price & Stock for FDS8813NZ

Part # Distributor Description Stock Price Buy
Bristol Electronics   274
RFQ
Quest Components   1296
  • 1 $1.7850
  • 68 $0.5355
  • 374 $0.4641
$0.4641 / $1.7850 Buy Now
Rochester Electronics Small Signal Field-Effect Transistor, 18.5A, 30V, N-Channel, MOSFET RoHS: Compliant Status: Active Min Qty: 1 792
  • 1 $0.6533
  • 25 $0.6402
  • 100 $0.6141
  • 500 $0.5880
  • 1,000 $0.5553
$0.5553 / $0.6533 Buy Now
Perfect Parts Corporation   169736
RFQ
Win Source Electronics MOSFET N-CH 30V 18.5A 8-SOIC 48000
  • 95 $0.5535
  • 195 $0.5178
  • 300 $0.5000
  • 435 $0.4643
  • 565 $0.4464
  • 700 $0.4286
$0.4286 / $0.5535 Buy Now

Part Details for FDS8813NZ

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FDS8813NZ Part Data Attributes

FDS8813NZ Fairchild Semiconductor Corporation
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FDS8813NZ Fairchild Semiconductor Corporation Small Signal Field-Effect Transistor, 18.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOIC
Package Description ROHS COMPLIANT, SOP-8
Pin Count 8
Manufacturer Package Code 8LD, JEDEC MS-012, .150"NARROW BODY
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 18.5 A
Drain-source On Resistance-Max 0.0045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 520 pF
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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