Part Details for FDS8812NZ by Fairchild Semiconductor Corporation
Overview of FDS8812NZ by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FDS8812NZ
Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | MOSFET N-CH 30V 20A 8-SOIC | 3530 |
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RFQ |
Part Details for FDS8812NZ
FDS8812NZ CAD Models
FDS8812NZ Part Data Attributes
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FDS8812NZ
Fairchild Semiconductor Corporation
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Datasheet
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FDS8812NZ
Fairchild Semiconductor Corporation
30V N-Channel PowerTrench® MOSFET, 8LD, JEDEC MS-012, .150"NARROW BODY, 2500/TAPE REEL
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | SOIC | |
Package Description | SMALL OUTLINE, R-PDSO-G8 | |
Pin Count | 8 | |
Manufacturer Package Code | 8LD, JEDEC MS-012, .150"NARROW BODY | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 2 A | |
Drain-source On Resistance-Max | 0.004 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 870 pF | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2.5 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |