Datasheets
FDS6975 by:

Power Field-Effect Transistor, 6A I(D), 30V, 0.032ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8

Part Details for FDS6975 by Fairchild Semiconductor Corporation

Overview of FDS6975 by Fairchild Semiconductor Corporation

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Price & Stock for FDS6975

Part # Distributor Description Stock Price Buy
Bristol Electronics   6725
RFQ
Quest Components MOSFET Transistor, P-Channel, SO 4
  • 1 $1.2444
  • 5 $1.0370
$1.0370 / $1.2444 Buy Now
Quest Components MOSFET Transistor, P-Channel, SO 5380
  • 1 $2.0740
  • 965 $0.7259
  • 2,067 $0.6222
$0.6222 / $2.0740 Buy Now
Quest Components MOSFET Transistor, P-Channel, SO 89
  • 1 $3.2000
  • 39 $1.7600
  • 86 $1.6000
$1.6000 / $3.2000 Buy Now
Rochester Electronics Power Field-Effect Transistor, 6A, 30V, 0.032ohm, 2-Element, P-Channel, MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 37346
  • 1 $0.6762
  • 25 $0.6627
  • 100 $0.6356
  • 500 $0.6086
  • 1,000 $0.5748
$0.5748 / $0.6762 Buy Now
DISTI # SMC-FDS6975
Sensible Micro Corporation Trans Mosfet P-Ch Dual 30 RoHS: Not Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days 55
  • 100 $1.2730
  • 500 $1.2395
  • 1,000 $1.0720
$1.0720 / $1.2730 RFQ

Part Details for FDS6975

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FDS6975 Part Data Attributes:

FDS6975 Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FDS6975 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 6A I(D), 30V, 0.032ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOIC
Package Description LEAD FREE, SO-8
Pin Count 8
Manufacturer Package Code 8LD, JEDEC MS-012, .150"NARROW BODY
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDS6975

This table gives cross-reference parts and alternative options found for FDS6975. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS6975, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDS6975 Dual P-Channel Logic Level PowerTrench® MOSFET -30V, -6A, 32mΩ, 2500-REEL onsemi FDS6975 vs FDS6975
Part Number Description Manufacturer Compare
IRF7101TRPBF Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 International Rectifier FDS6975 vs IRF7101TRPBF
MMDF3N03HD 2.8A, 30V, 0.09ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, CASE 751-05, SOIC-8 Motorola Mobility LLC FDS6975 vs MMDF3N03HD
HP4936DYT 5.8A, 30V, 0.037ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Rochester Electronics LLC FDS6975 vs HP4936DYT
IRF7416QPBF Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier FDS6975 vs IRF7416QPBF
IRF7314PBF Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier FDS6975 vs IRF7314PBF
IRF7403TRPBF Power Field-Effect Transistor, 6.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, International Rectifier FDS6975 vs IRF7403TRPBF
IRF7306TRPBF Power Field-Effect Transistor, 3A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier FDS6975 vs IRF7306TRPBF
IRF7416TRPBF Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier FDS6975 vs IRF7416TRPBF
MMDF2N02E 3.6A, 25V, 0.1ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, CASE 751-05, SOIC-8 Motorola Mobility LLC FDS6975 vs MMDF2N02E
IRF7406GPBF Power Field-Effect Transistor, 5.8A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 International Rectifier FDS6975 vs IRF7406GPBF

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