Part Details for FDS6961AZ by Fairchild Semiconductor Corporation
Overview of FDS6961AZ by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDS6961AZ
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Quest Components | MOSFET Transistor, Matched Pair, N-Channel, SO | 6232 |
|
$0.1650 / $0.4500 | Buy Now |
Part Details for FDS6961AZ
FDS6961AZ CAD Models
FDS6961AZ Part Data Attributes:
|
FDS6961AZ
Fairchild Semiconductor Corporation
Buy Now
Datasheet
|
Compare Parts:
FDS6961AZ
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 3.5A I(D), 30V, 0.09ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
|
Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | SOT | |
Package Description | SMALL OUTLINE, R-PDSO-G8 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 3.5 A | |
Drain-source On Resistance-Max | 0.09 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e0 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2 W | |
Pulsed Drain Current-Max (IDM) | 14 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDS6961AZ
This table gives cross-reference parts and alternative options found for FDS6961AZ. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS6961AZ, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
MMDF2P01HDR2 | 3.4A, 12V, 0.18ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SO-8 | onsemi | FDS6961AZ vs MMDF2P01HDR2 |
HP4936DY | 5.8A, 30V, 0.037ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | Intersil Corporation | FDS6961AZ vs HP4936DY |
RF1K49090 | Power Field-Effect Transistor, 3.5A I(D), 12V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | Fairchild Semiconductor Corporation | FDS6961AZ vs RF1K49090 |
HAT1126R | 6A, 60V, 0.085ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, FP-8DA, SOP-8 | Renesas Electronics Corporation | FDS6961AZ vs HAT1126R |
HP4936DYT | 5.8A, 30V, 0.037ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | Intersil Corporation | FDS6961AZ vs HP4936DYT |
BSO207P | Power Field-Effect Transistor, 5.7A I(D), 20V, 0.045ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SOP-8 | Infineon Technologies AG | FDS6961AZ vs BSO207P |
BSO301SPH | Power Field-Effect Transistor, 12.6A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 | Infineon Technologies AG | FDS6961AZ vs BSO301SPH |
HUF76105DK8T | Power Field-Effect Transistor, 5A I(D), 30V, 0.072ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOIC-8 | Fairchild Semiconductor Corporation | FDS6961AZ vs HUF76105DK8T |
NDS8961 | Power Field-Effect Transistor, 3.1A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | FDS6961AZ vs NDS8961 |
BSO211PHXUMA1 | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.067ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 | Infineon Technologies AG | FDS6961AZ vs BSO211PHXUMA1 |